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SHETIME TFN22-S1S1-2000-A

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SHETIME TFN22-S1S1-2000-A

Card Type : MicroSD Card

Brand Name : TFN22-S1S1-2000-A

Description : Push-Push 1.85mm MicroSD Card SMD PC Card Sockets RoHS

Packaging Details : SMD

Card Connection Mode : Push-Push

Model Number : TFN22-S1S1-2000-A

Delivery Time : 3-5工作日

Stock : 100000

Height Above Board : 1.85mm

MOQ : 1000

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Product Overview

This product specification defines the product performance and the test methods to ascertain the performance of the T-FLASH CARD CONN., which is designed and manufactured by Compeny. This product specification defines the product performance and the test methods to ascertain the performance of the T-FLASH CARD CONN., which is designed and manufactured by Compeny. T-FLASH CARD.

Brand DONGGUAN GYUEDA ELECTRONICS CO.,LTD

Part Number TFN22-S1S1-2000-A

Description T F B

Material Compliance RoHS

Manufacturing Locations TAIWANFACTORY:
CHINAFACTORY:

Item	Requirements	Test Methods
1. Confirmation of Product	Product shall be conforming to the requirements of applicable product drawing.	Visually, dimensions and functionally inspected per applicable product drawing.
2. Contact resistance (Low Level)	80 m Max. initial 80 m .	Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. 10mA 20 mV max.
3. Insulation resistance	1000 M Min. 1000 M	Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). MIL-STD-202, 302 B (500V DC10%)
4. Dielectric Strength	Connector must withstand test potential of 500 V AC for 1 minute. Current leakage must be 1.0 mA max.. 500V AC 1.0 mA.	Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. MIL-STD-202 301
5. Durability (Repeated Mating/Unmating)	Contact Resistance: 100 m Max. after testing 100 m	Mate and unmate connector for 5000 cycle . 5000
6. Temperature rise	30C Max. 30C	Carry rated current load.0.3A per contact. UL4980.3A UL498
7. Vibration Sinusoidal Low Frequency	No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance:100 mmax. 1 sec (s) 100 m	Subj

TABLE I: PERFORMANCE REQUIREMENTS
Items	Requirements	Test Methods
1.Confirmation of Product	Product shall be conforming to the requirements of applicable product drawing.	Visually, dimensions and functionally inspected per applicable product drawing.
2. Contact resistance (Low Level)	80 m Max. initial 80 m .	Subject mated contacts assembled in housing to closed circuit of 10 mA max. at open circuit voltage of 20 mV max. 10mA 20 mV max.
3. Insulation resistance	1000 M Min. 1000 M	Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 302, Condition B (500 V DC10%). MIL-STD-202, 302 B (500V DC10%)
4. Dielectric Strength	Connector must withstand test potential of 500 V AC for 1 minute. Current leakage must be 1.0 mA max.. 500V AC 1.0 mA.	Measure by applying test potential between the adjacent contacts, and between the contacts and ground in the mated connector. MIL-STD-202, Method 301. MIL-STD-202 301
5. Durability (Repeated Mating/Unmating)	Contact Resistance: 100 m Max. after testing 100 m	Mate and unmate connector for 5000 cycle . 5000
6. Temperature rise	30C Max. 30C	Carry rated current load.0.3A per contact. UL4980.3A UL498
7.Vibration Sinusoidal Low Frequency	No electrical discontinuity greater then 1 sec (s) shall occur. Contact resistance:100 mmax. 1 sec (s) 100 m	Subj

TABLE II: PRODUCT QUALIFICATION TEST SEQUENCE
Items	Requirements	Test Methods

TABLE III: REFLOW SOLDERING PROFILE
Items	Requirements	Test Methods

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